The fluorination effect: the importance of backbone planarity in achieving high performance ambipolar field effect transistors

dc.centroFacultad de Cienciases_ES
dc.contributor.authorGámez-Valenzuela, Sergio
dc.contributor.authorComí, Marc
dc.contributor.authorGonzález, S. R.
dc.contributor.authorDelgado, M. C. R
dc.contributor.authorAl-Hashimi, Mohammed
dc.contributor.authorOrtiz, R. P.
dc.date.accessioned2023-05-09T11:38:58Z
dc.date.available2023-05-09T11:38:58Z
dc.date.created2023-05-09
dc.date.issued2022-01-12
dc.departamentoQuímica Física
dc.description.abstractWe report here the synthesis and physico-chemical characterization of a series of donor–acceptor (D–A) copolymers consisting of 4,7-di(2-thienyl)-2,1,3-benzothiadiazole and isoindigo building blocks, which have been progressively fluorinated with the aim of enhancing intrachain interactions and thus increasing their electrical performances in organic field effect transistors (OFETs). The effect of the polymeric partially locked conformations, upon fluorination, on the material properties has been comprehensively analyzed by means of spectroscopic (UV-vis-NIR and Raman) and electrochemical techniques and density functional theory (DFT) calculations. Raman spectroscopy highlights that the impact of gradual fluorination on the molecular and electronic properties is highly dependent on the building blocks into which the fluorine atoms are introduced, being a much more efficient strategy to add them in the isoindigo unit. Electrical characterization of OFETs also shows that fluorination progressively increases the polymer coplanarity and electron affinity, varying the electrical performance from low hole dominated charge transport in the unfluorinated polymer to balanced ambipolar charge transport in the fluorinated ones. The best field-effect mobilities were recorded when fluorine atoms were added to the isoindigo unit, with values of 0.1 cm2 V−1 s−1 for both hole and electron transports.es_ES
dc.description.sponsorshipThe work at the University of Málaga was supported by the MICINN (project PID2019-110305GB-I00) and by Junta de Andalucía (project P18-FR-4559). S. G.-V. thanks the MINECO for an FPU predoctoral fellowship (FPU17/04908). The authors would like to thank the computer resources, technical expertise and assistance provided by the SCBI (Supercomputing and Bioinformatics) centre of the University of Málaga. The Vibrational spectroscopy (EVI), XRD and AFM labs of the Research Central Services (SCAI) of the University of Málaga are also gratefully acknowledged. Al-Hashimi likes to acknowledge the financial support from the Qatar National Research Fund, Project Number NPRP12S-0304-190227. Notes and references // Funding for open access charge: Universidad de Málagaes_ES
dc.identifier.citationGámez-Valenzuela, S., Comi, M., González, S. R., Delgado, M. C. R., Al-Hashimi, M., & Ortiz, R. P. (2023). The Fluorination Effect: Importance of Backbone Planarity in Achieving High Performance Ambipolar Field Effect Transistors. Journal of Materials Chemistry C.es_ES
dc.identifier.doi10.1039/d2tc05073k
dc.identifier.urihttps://hdl.handle.net/10630/26533
dc.language.isoenges_ES
dc.publisherRSCes_ES
dc.rightsAtribución-NoComercial 4.0 Internacional*
dc.rights.accessRightsopen accesses_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/*
dc.subjectFluoraciónes_ES
dc.subject.otherFluoraciónes_ES
dc.titleThe fluorination effect: the importance of backbone planarity in achieving high performance ambipolar field effect transistorses_ES
dc.typejournal articlees_ES
dc.type.hasVersionVoRes_ES
dspace.entity.typePublication

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