RT Conference Proceedings
T1 Extracción de modelos casi-estáticos para dispositivos no-lineales a partir de medidas en el dominio de la frecuencia
A1 Pérez-Parras, Sergio Luis
A1 Martín-Guerrero, Teresa María
A1 Baños-Polglase, Juana Daphne
A1 Camacho-Peñalosa, Carlos
K1 Transistores de efecto de campo
AB In this contribution an extraction method already proposed by authors and suitable for FET-type devices that could be represented by a quasi-static model is illustrated. For the first time, the method is applied to a FET embedded in a parasitic shell and fed at each port with sources that include internal impedances. The main impact of adding these elements is that intrinsic voltages that control the nonlinear current and charge sources of the model to be extracted are not ideal monochromatic signals. The results show that the extraction method works with these more realistic control voltages at the expense of an important reduction of the range of control voltages with respect to the ideal case. The dependence of the results on the input power level is also assessed. Results demonstrate that the method is still valid under realistic conditions and it is ready to be applied to experimental results.
YR 2019
FD 2019-09-11
LK https://hdl.handle.net/10630/18306
UL https://hdl.handle.net/10630/18306
LA spa
NO Este trabajo ha sido parcialmente financiado por el Plan Propio de Investigación y Transferencia de la Universidad de Málaga-Andalucia Tech.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 19 ene 2026