RT Conference Proceedings
T1 Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates
A1 Moser, M.
A1 Pradhan, M.
A1 Alomari, M.
A1 Schoch, B.
A1 Sharma, K.
A1 Kallfass, I.
A1 García-Luque, A.
A1 Martín-Guerrero, Teresa María
A1 Burghartz, J. N.
K1 Silicio
K1 Aluminio
AB A CMOS-compatible industrial processing and RF analysis of 150 mm GaN-on-HR-Si substrates with AlGaN and InAlN barrier is presented. Process development along with transfer to large-wafer scale is shown and some HEMT calibration devices produced on AlGaN/GaN following the aforementioned procedure are characterized in terms of RF-performance by using a set of measured multi-bias S-parameters. An automatic small-signal equivalent circuit extraction strategy for these AlGaN/GaN DUTs is validated and some de-embedded figures of merit are drawn out in order to initially evaluate this promising technology.
YR 2022
FD 2022
LK https://hdl.handle.net/10630/25159
UL https://hdl.handle.net/10630/25159
LA eng
NO This work is supported by the I Plan Propio de la Univ. de Málaga (PhD Grant-401), and the European Microwave Association™ by the EuMA Internship Award 2021 edition. Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 21 ene 2026