RT Conference Proceedings
T1 Obtaining quasi-static models using a frequency domain extraction methodology
A1 Pérez-Parras, Sergio Luis
A1 Martín-Guerrero, Teresa María
A1 Baños-Polglase, Juana Daphne
A1 Camacho-Peñalosa, Carlos
K1 Comunicaciones
AB This contribution illustrates how a realistic nonlinear quasi-static model for FET-type devices can be extracted using an original frequency domain extraction technique. An ideal ‘made-up’ device is built from the measured bias dependence of a GaN medium power device. This ideal device is excited by two ideal voltage sources and its response (drain current) is used to illustrate how the extraction procedure can separate conduction and displacement current components provided the total current spectrum (or, alternatively, waveform) and control voltages are known.
YR 2018
FD 2018-07-02
LK https://hdl.handle.net/10630/16101
UL https://hdl.handle.net/10630/16101
LA eng
NO © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”
NO This work has been supported by the Junta de Andalucía under Grant (TIC2012-1237). Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 19 ene 2026