RT Conference Proceedings
T1 Understanding polymer orientation at the interface by SERS
A1 Harbuzaru, Alexandra
A1 Arrechea-Marcos, Iratxe
A1 López-Navarrete, Juan Teodomiro
A1 Ponce-Ortiz, Rocío
A1 Ruiz-Delgado, María del Carmen
K1 Espectroscopia Raman
K1 Polímeros conductores
AB In the organic electronic research field, it is well known that the largest contribution tocharge transport occurs within the first few nanometers of the semiconductor near thedielectric interface. Surface Enhanced Raman spectroscopy (SERS) appears as an easyand straightforward technique to analyze this buried interface and to provide usefulinformation on molecular orientation at the device active layer. Here we present the study of the molecular orientation of the widely studiedP(NDI2OD-T2) polymer at the semiconductor/dielectric and semiconductor/metalinterfaces using SERS and DFT calculations. Our first SERS results show a relativeintensification of selected normal modes, which indicates that the orientation of thepolymer changes from a face-on (before annealing treatment) to and edge-ondisposition after melt annealing, being this in good agreement with the previousresults gathered from other techniques (Figure 1).
YR 2017
FD 2017-07-07
LK http://hdl.handle.net/10630/14150
UL http://hdl.handle.net/10630/14150
LA spa
NO Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 21 ene 2026