RT Journal Article
T1 Caracterización y Simulación de un Diodo Schottky de Microondas
A1 Moreno-Pozas, Laureano
A1 Durán Valdeiglesias, Elena
A1 Ávila Ruiz, Juan Manuel
A1 Molina-Fernández, Íñigo
K1 Diodos
K1 Microondas
AB Microwave diode models included in commercial simulators use a large set of parameters, so they are often difficult to set up in order to match the actual response of a specific device. In this paper a simple model for a zero-bias microwave Schottky diode is presented. Noise characteristics are determined by measurements and then incorporated to the large signal model offered by the manufacturer in the diode datasheet. Using this model a diode power detector in large signal operation is simulated with commercial software, achieving excellent agreement with the measurement results, both in terms of power sensitivity and noise spectrum.
YR 2013
FD 2013-09
LK http://hdl.handle.net/10630/6018
UL http://hdl.handle.net/10630/6018
LA spa
NO Presentado en el XXVIII Simposium Nacional de la Unión Científica Internacional de Radio. URSI 2013, Santiago de Compostela, 11 al 13 de septiembre de 2013.
NO Consejería de Economía, Innovación, Ciencia y Empleo de la Junta de Andalucía, mediante el proyecto P09-TIC-5268. Universidad de Málaga - Campus de Excelencia Internacional Andalucía Tech
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 25 ene 2026