RT Journal Article
T1 Electrochemically grown vertically aligned ZnO nanorod array/p+-Si (100) heterojunction contact diodes
A1 Rodriguez-Moreno, Jorge
A1 Navarrete-Astorga, Elena
A1 Romero, Rocío
A1 Martín-Jiménez, Francisco de Paula
A1 Schrebler, Ricardo
A1 Ramos-Barrado, José R.
K1 Diados
AB ZnO nanorod array/p+-Si vertical heterojunction diodes, in which the ZnO nanorods have been grown by electrodeposition onto a SnO2:F thin film/glass substrate, have been fabricated by the direct-bonding technique. The heterojunction diode device showed a very good rectifying behavior with a rectification ratio of the forward-to-reverse bias current as ca. 2.5 × 104 at a voltage of ± 10 V. The current–voltage (I–V) characteristic was examined in the framework of the thermionic emission model. The obtained ideality factor and the barrier height values of the diode are 2.8 and 0.85 eV, respectively. The conduction mechanisms have been investigated from I–V characteristics as well.
PB Elsevier
YR 2013
FD 2013
LK https://hdl.handle.net/10630/34060
UL https://hdl.handle.net/10630/34060
LA spa
NO Jorge Rodríguez-Moreno, Elena Navarrete-Astorga, Rocio Romero, Francisco Martín, Ricardo Schrebler, José R. Ramos-Barrado, Enrique A. Dalchiele, Electrochemically grown vertically aligned ZnO nanorod array/p+-Si (100) heterojunction contact diodes, Thin Solid Films, Volume 548, 2013, Pages 235-240, ISSN 0040-6090, https://doi.org/10.1016/j.tsf.2013.09.091
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 20 ene 2026