RT Journal Article
T1 Measurement-based FET analytical modeling using the nonlinear function sampling approach
A1 Martín-Guerrero, Teresa María
A1 Santarelli, Alberto
A1 Gibiino, Gian Piero
A1 Traverso, Pier Andrea
A1 Camacho-Peñalosa, Carlos
A1 Filicori, Fabio
K1 Transistores de efecto de campo
AB A novel and fast method for the measurement-based identification of an analytical FET compact model from large- signal waveforms is presented. Based on a two-tone two-port experiment, a recently published Nonlinear Function Sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit model. The approach is demonstrated on a 250-nm GaN-on-SiC HEMT at 2.5 and 5 GHz.
PB IEEE Microwave and Wireless Components Letters
YR 2020
FD 2020-12
LK https://hdl.handle.net/10630/29693
UL https://hdl.handle.net/10630/29693
LA eng
NO T. M. Martín-Guerrero, A. Santarelli, G. P. Gibiino, P. A. Traverso, C. Camacho-Peñalosa and F. Filicori, "Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach," in IEEE Microwave and Wireless Components Letters, vol. 30, no. 12, pp. 1145-1148, Dec. 2020, doi: 10.1109/LMWC.2020.3027989.
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 21 ene 2026