RT Conference Proceedings
T1 Understanding organic materials performance in field-effect transistors
A1 Ponce-Ortiz, Rocío
A1 Arrechea-Marcos, Iratxe
A1 López Espejo, Guzmán
A1 López-Navarrete, Juan Teodomiro
A1 Segura, José L.
K1 Efecto Raman de resonancia
AB In the last years, much of our effort has been devoted to the search and study of new high-mobility semiconductors for organic thin film transistors. The approach used for the materials design has been two-fold: (i) the combination of donor and acceptor moieties in the pi-conjugated skeleton, which allows fine tuning of the frontier molecular orbitals, being this necessary for achieving electron/hole or ambipolar transport and ambient stability; and (ii) rational selection of the type and positioning of specific solubilizing substituents ensuring processability, which is essential to make these materials scalable to industry.However, material processability should be attained minimizing a negative effect on charge transport. Therefore, proper energy levels, planar molecular conformations, close intermolecular pi-pi stacking and adequate thin film crystallinity need to be maintained upon alkyl substitution.In this communication, several examples of molecular and polymeric materials are shown. A rational design, guided by experimental and theoretical evidences, has prompted modifications on their conjugated skeletons,donor/acceptor subunits ratio and/or selection of proper alkyl solubilizing chains, which induce noticeable changes in their electronic performances. The main aim of these studies is the basic understanding of charge transport inorganic materials. For this end, we will use Raman spectroscopy and DFT quantum-chemical calculations as important tools for materials characterization.
YR 2017
FD 2017-07-14
LK http://hdl.handle.net/10630/14243
UL http://hdl.handle.net/10630/14243
LA spa
NO Comunicación oral
NO Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 21 ene 2026