RT Conference Proceedings
T1 N coordination chemistry in diluted InGaAs nitride layers
A1 Gabás-Pérez, Mercedes
A1 López-Escalante, María Cruz
A1 Ramos-Barrado, José Ramón
A1 Ściana, Beata
A1 Dawidowski, Wojciech
A1 Radziewicz, Damian
A1 Dłużewski, Piotr
K1 Semiconductores
AB GaAsN and InGaAsN semiconductor alloys with a small amount of nitrogen, so called dilute nitrides, constitute a novel compounds family with applications in telecom lasers and very efficient multijunction solar cells. The incorporation of N, which has a much larger electronegativity and smaller atomic size compared to As, induces a strong structural distortion in the InGaAs coordination chemistry, which will also affect the material electronic structure and band-gap. In particular, the nearest-neighbour bonding configuration of the N in InGaAsN has proven its influence on the band-gap. Our ARXPS results demonstrate that a higher growth temperature favour the formation of In-N bonds.
YR 2015
FD 2015-10-14
LK http://hdl.handle.net/10630/10513
UL http://hdl.handle.net/10630/10513
LA eng
NO Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.               - MINECO through TEC2011-28639-C02-02and TEC2014-54260-C3-3-P- Wroclaw University of Technology statutory grant
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 23 ene 2026