RT Conference Proceedings
T1 Relaxation-Time Modeling for NQS Phenomena Characterization in High-Frequency Diodes.
A1 García Luque, Aarón
A1 Martín-Guerrero, Teresa María
A1 Mata-Contreras, Francisco Javier
K1 Procesos irreversibles
K1 Diodos
K1 Analizadores de redes eléctricas
AB AbstractÐA characterization methodology for nonquasi-static (NQS) phenomena in high frequency electron devices is carried out in this work. The proposed nonlinear diode model includes a S-parameters-based procedure for the estimation of the parasitic network, and the direct extraction of the nonlinear intrinsic state functions from single-tone measurements. This NQS proposal,based on a first-order electric charge source, was validated for some commercial diodes improving the prior QS model whenfrequency rises. A voltage-discretization analysis and some small signal (0.7-20 GHz) and waveforms (f0 = 2 and 8 GHz) tests,prove the successful performance of these circuits and their frequency extrapolation possibilities versus foundry models.
YR 2023
FD 2023
LK https://hdl.handle.net/10630/28048
UL https://hdl.handle.net/10630/28048
LA eng
NO This work is supported by the Universidad de Málaga (PhD Grant-401), and the UMA20-FEDERJA-001 regional project.
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 20 ene 2026