RT Journal Article
T1 Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band
A1 Pérez-Galacho, Diego
A1 Baudot, Charles
A1 Hirtzlin, Tifenn
A1 Messaoudène, Sonia
A1 Vulliet, Nathalie
A1 Crozat, Paul
A1 Boeuf, Frederic
A1 Vivien, Laurent
A1 Marris-Morini, Delphine
K1 Comunicaciones ópticas
AB In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (Vπ Lπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 Vpp, compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gbps.
PB Optical Publishing Group
YR 2017
FD 2017-05-04
LK https://hdl.handle.net/10630/33842
UL https://hdl.handle.net/10630/33842
LA eng
NO Diego Perez-Galacho, Charles Baudot, Tifenn Hirtzlin, Sonia Messaoudène, Nathalie Vulliet, Paul Crozat, Frederic Boeuf, Laurent Vivien, and Delphine Marris-Morini, "Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band," Opt. Express 25, 11217-11222 (2017)
NO European project Plat4m (FP7-2012-318178); European project Cosmicc (H2020-ICT-27-2015- 688516); French Industry Ministry Nano2017 program
DS RIUMA. Repositorio Institucional de la Universidad de Málaga
RD 21 ene 2026