2026-05-28T18:52:59Zhttps://riuma.uma.es/rest/oai/request

oai:riuma.uma.es:10630/105132026-02-03T12:19:31Zcom_10630_2254col_10630_37959

Gabás-Pérez, Mercedes López-Escalante, María Cruz Ramos-Barrado, José Ramón Ściana, Beata Dawidowski, Wojciech Radziewicz, Damian Dłużewski, Piotr 2015-10-14T11:47:54Z 2015-10-14T11:47:54Z 2015-10-14 http://hdl.handle.net/10630/10513 http://orcid.org/0000-0002-9626-6131 GaAsN and InGaAsN semiconductor alloys with a small amount of nitrogen, so called dilute nitrides, constitute a novel compounds family with applications in telecom lasers and very efficient multijunction solar cells. The incorporation of N, which has a much larger electronegativity and smaller atomic size compared to As, induces a strong structural distortion in the InGaAs coordination chemistry, which will also affect the material electronic structure and band-gap. In particular, the nearest-neighbour bonding configuration of the N in InGaAsN has proven its influence on the band-gap. Our ARXPS results demonstrate that a higher growth temperature favour the formation of In-N bonds. eng open access by-nc-nd Semiconductores N coordination chemistry in diluted InGaAs nitride layers conference output