2026-05-31T07:33:47Zhttps://riuma.uma.es/rest/oai/request

oai:riuma.uma.es:10630/198102026-02-03T12:16:30Zcom_10630_2254col_10630_37959

García Luque, Aarón Martín-Guerrero, Teresa María Santarelli, Alberto Camacho-Peñalosa, Carlos 2020-09-21T08:05:37Z 2020-09-21T08:05:37Z 2020-09-21 https://hdl.handle.net/10630/19810 The characterization of active devices is a key point when developing system-level design techniques. To this aim, an automatic quasi-static (QS) nonlinear model extraction technique for solid state devices by using the Nonlinear Function Sampling (NFS) operator has been already developed and validated for GaN FET transistors. In this contribution, the adaptation of this technique to one-port devices is proposed and tested. An example has been designed, in which a commercial diode has been characterized by using a CAD tool and its foundry model. It has been shown that the proposed equivalent nonlinear model extracted with NFS-based method offers good results when simulating the diode behaviour even under conditions not exactly the same as those employed in the characterization process. spa open access Análisis funcional no lineal Diodos Moduladores (Electrónica) Modelo no-lineal de diodo mediante el operador NFS y su implementación en herramienta CAD conference output