2026-05-30T06:30:51Zhttps://riuma.uma.es/rest/oai/request

oai:riuma.uma.es:10630/240642026-02-03T11:01:42Zcom_10630_2254col_10630_37953

00925njm 22002777a 4500 dc Piliougine, Michel author Sánchez-Friera, Paula author Petrone, Giovanni author Sánchez-Pacheco, Francisco José author Spagnuolo, Giovanni author Sidrach-de-Cardona-Ortin, Mariano author 2022 The degradation of two amorphous silicon-based photovoltaic (PV) modules, namely, of single junction amorphous silicon (a-Si) and of micromorph tandem (a-Si/μ-Si), after 11 years of exposure in the south of Spain is analyzed. Their I-V curves were measured outdoors to study the changes of the electrical parameters in the course of three different periods: during the initial days of exposure, during the first year, and in the subsequent 10-year period. The translation of the curves to an identical set of operating conditions, which enables a meaningful comparison, was done by the dif ferent correction procedures described in the standard IEC60891:2021, including the procedure 3, which does not require the knowledge of module parameters, whose values are typically not available. The annual power degradation rates over the entire 11-year period are 1.12% for the a-Si module, which is 3.02% for the first year, and 0.98% for the a-Si/μ-Si, which is 2.29% for the initial year Piliougine, Michel & Sánchez-Friera, Paula & Petrone, Giovanni & Sánchez Pacheco, Francisco & Spagnuolo, Giovanni & Sidrach-de-Cardona, M.. (2022). Analysis of the degradation of amorphous silicon-based modules after 11 years of exposure by means of IEC60891:2021 procedure 3. Progress in Photovoltaics Research and Applications. 10.1002/pip.3567 https://hdl.handle.net/10630/24064 http://doi.org/10.1002/pip.3567 Silicio Analysis of the degradation of amorphous silicon-based modules after 11 years of exposure by means of IEC60891:2021 procedure 3