2026-06-03T00:41:44Zhttps://riuma.uma.es/rest/oai/requestoai:riuma.uma.es:10630/251592026-02-03T11:51:17Zcom_10630_2254col_10630_37959
Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates
Moser, M.
Pradhan, M.
Alomari, M.
Schoch, B.
Sharma, K.
Kallfass, I.
García-Luque, A.
Martín-Guerrero, Teresa María
Burghartz, J. N.
Silicio
Aluminio
A CMOS-compatible industrial processing and RF analysis of 150 mm GaN-on-HR-Si substrates with AlGaN and InAlN barrier is presented. Process development along with transfer to large-wafer scale is shown and some HEMT calibration devices produced on AlGaN/GaN following the aforementioned procedure are characterized in terms of RF-performance by using a set of measured multi-bias S-parameters. An automatic small-signal equivalent circuit extraction strategy for these AlGaN/GaN DUTs is validated and some de-embedded figures of merit are drawn out in order to initially evaluate this promising technology.
2022-10-03T09:37:13Z
2022-10-03T09:37:13Z
2022
conference output
https://hdl.handle.net/10630/25159
eng
The 17th European Microwave Integrated Circuits Conference (EuMIC)
Milano (Italy)
26th – 27th September 2022
open access