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      <dc:title>Polarization insensitive metamaterial engineered multimode interference coupler in a 220 nm silicon-on-insulator platform</dc:title>
      <dc:creator>Pérez-Armenta, Carlos</dc:creator>
      <dc:creator>Ortega-Moñux, Alejandro</dc:creator>
      <dc:creator>Luque-González, José Manuel</dc:creator>
      <dc:creator>Halir, Robert</dc:creator>
      <dc:creator>Schmid, Jens</dc:creator>
      <dc:creator>Cheben, Pavel</dc:creator>
      <dc:creator>Molina-Fernández, Íñigo</dc:creator>
      <dc:creator>Wanguemert-Pérez, Juan Gonzalo</dc:creator>
      <dc:subject>Telecomunicaciones-Equipos y material</dc:subject>
      <dc:subject>Sistemas de telecomunicaciones</dc:subject>
      <dc:description>High-index contrast silicon waveguides exhibit strong birefringence that hinders the development of polarization-insensitive devices, especially for sub-micrometer silicon layer thickness. Here a polarizationindependent 2 × 2 multimode interference coupler in a 220 nm silicon-on-insulator platform is designed and experimentally demonstrated for the first time. Leveraging the advanced control of electromagnetic properties provided by a subwavelength grating metamaterial topology, our multimode interference coupler operates for both TE and TM polarization states with measured polarization dependent loss, insertion loss and imbalance all less than 1 dB, and phase errors below 5◦ in the wavelength range from 1500 nm to 1560 nm. The device has a footprint of only 3.5 μm × 47.25 μm and was fabricated using a single etch-step process with a minimum feature size of 100 nm compatible with immersion deep-UV lithography.</dc:description>
      <dc:date>2023-04-26T09:49:34Z</dc:date>
      <dc:date>2023-04-26T09:49:34Z</dc:date>
      <dc:date>2023</dc:date>
      <dc:type>journal article</dc:type>
      <dc:identifier>Carlos Pérez-Armenta, Alejandro Ortega-Moñux, José Manuel Luque-González, Robert Halir, Jens Schmid, Pavel Cheben, Iñigo Molina-Fernández, J. Gonzalo Wangüemert-Pérez, Polarization insensitive metamaterial engineered multimode interference coupler in a 220 nm silicon-on-insulator platform, Optics &amp; Laser Technology, Volume 164, 2023, 109493, ISSN 0030-3992, https://doi.org/10.1016/j.optlastec.2023.109493. (https://www.sciencedirect.com/science/article/pii/S0030399223003869)</dc:identifier>
      <dc:identifier>https://hdl.handle.net/10630/26414</dc:identifier>
      <dc:identifier>https://doi.org/10.1016/j.optlastec.2023.109493</dc:identifier>
      <dc:language>eng</dc:language>
      <dc:rights>http://creativecommons.org/licenses/by-nc-nd/4.0/</dc:rights>
      <dc:rights>open access</dc:rights>
      <dc:rights>Attribution-NonCommercial-NoDerivatives 4.0 Internacional</dc:rights>
      <dc:publisher>Elsevier</dc:publisher>
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