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                  <mods:namePart>Gámez-Valenzuela, Sergio</mods:namePart>
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                  <mods:namePart>González, S. R.</mods:namePart>
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                  <mods:namePart>Delgado, M. C. R</mods:namePart>
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                  <mods:namePart>Al-Hashimi, Mohammed</mods:namePart>
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                  <mods:namePart>Ortiz, R. P.</mods:namePart>
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               <mods:identifier type="citation">Gámez-Valenzuela, S., Comi, M., González, S. R., Delgado, M. C. R., Al-Hashimi, M., &amp; Ortiz, R. P. (2023). The Fluorination Effect: Importance of Backbone Planarity in Achieving High Performance Ambipolar Field Effect Transistors. Journal of Materials Chemistry C.</mods:identifier>
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               <mods:identifier type="doi">10.1039/d2tc05073k</mods:identifier>
               <mods:abstract>We report here the synthesis and physico-chemical characterization of a series of donor–acceptor (D–A) copolymers consisting of 4,7-di(2-thienyl)-2,1,3-benzothiadiazole and isoindigo building blocks, which have been progressively fluorinated with the aim of enhancing intrachain interactions and thus increasing their electrical performances in organic field effect transistors (OFETs). The effect of the polymeric partially locked conformations, upon fluorination, on the material properties has been comprehensively analyzed by means of spectroscopic (UV-vis-NIR and Raman) and electrochemical techniques and density functional theory (DFT) calculations. Raman spectroscopy highlights that the impact of gradual fluorination on the molecular and electronic properties is highly dependent on the building blocks into which the fluorine atoms are introduced, being a much more efficient strategy to add them in the isoindigo unit. Electrical characterization of OFETs also shows that fluorination progressively increases the polymer coplanarity and electron affinity, varying the electrical performance from low hole dominated charge transport in the unfluorinated polymer to balanced ambipolar charge transport in the fluorinated ones. The best field-effect mobilities were recorded when fluorine atoms were added to the isoindigo unit, with values of 0.1 cm2 V−1 s−1 for both hole and electron transports.</mods:abstract>
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               <mods:subject>
                  <mods:topic>Fluoración</mods:topic>
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                  <mods:title>The fluorination effect: the importance of backbone planarity in achieving high performance ambipolar field effect transistors</mods:title>
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