2026-06-03T00:42:05Zhttps://riuma.uma.es/rest/oai/requestoai:riuma.uma.es:10630/280482026-02-03T12:24:04Zcom_10630_2254col_10630_37959
Relaxation-Time Modeling for NQS Phenomena Characterization in High-Frequency Diodes.
García Luque, Aarón
Martín-Guerrero, Teresa María
Mata-Contreras, Francisco Javier
Procesos irreversibles
Diodos
Analizadores de redes eléctricas
AbstractÐA characterization methodology for nonquasi-static (NQS) phenomena in high frequency electron devices is carried out in this work. The proposed nonlinear diode model includes a S-parameters-based procedure for the estimation of the parasitic network, and the direct extraction of the nonlinear intrinsic state functions from single-tone measurements. This NQS proposal,
based on a first-order electric charge source, was validated for some commercial diodes improving the prior QS model when
frequency rises. A voltage-discretization analysis and some small signal (0.7-20 GHz) and waveforms (f0 = 2 and 8 GHz) tests,
prove the successful performance of these circuits and their frequency extrapolation possibilities versus foundry models.
2023-11-16T13:00:32Z
2023-11-16T13:00:32Z
2023-11-16T13:00:32Z
2023
conference output
https://hdl.handle.net/10630/28048
eng
The International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits
Aveiro (Portugal)
8-10 november 2023
open access