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00925njm 22002777a 4500 dc Martín-Guerrero, Teresa María author Santarelli, Alberto author Gibiino, Gian Piero author Traverso, Pier Andrea author Camacho-Peñalosa, Carlos author Filicori, Fabio author 2020-12 A novel and fast method for the measurement-based identification of an analytical FET compact model from large- signal waveforms is presented. Based on a two-tone two-port experiment, a recently published Nonlinear Function Sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit model. The approach is demonstrated on a 250-nm GaN-on-SiC HEMT at 2.5 and 5 GHz. T. M. Martín-Guerrero, A. Santarelli, G. P. Gibiino, P. A. Traverso, C. Camacho-Peñalosa and F. Filicori, "Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach," in IEEE Microwave and Wireless Components Letters, vol. 30, no. 12, pp. 1145-1148, Dec. 2020, doi: 10.1109/LMWC.2020.3027989. https://hdl.handle.net/10630/29693 10.1109/LMWC.2020.3027989 Transistores de efecto de campo Measurement-based FET analytical modeling using the nonlinear function sampling approach