<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-06-02T12:04:14Z</responseDate><request verb="GetRecord" identifier="oai:riuma.uma.es:10630/33840" metadataPrefix="qdc">https://riuma.uma.es/rest/oai/request</request><GetRecord><record><header><identifier>oai:riuma.uma.es:10630/33840</identifier><datestamp>2026-02-03T11:28:06Z</datestamp><setSpec>com_10630_2254</setSpec><setSpec>col_10630_37953</setSpec></header><metadata><qdc:qualifieddc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:doc="http://www.lyncode.com/xoai" xmlns:qdc="http://dspace.org/qualifieddc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://purl.org/dc/elements/1.1/ http://dublincore.org/schemas/xmls/qdc/2006/01/06/dc.xsd http://purl.org/dc/terms/ http://dublincore.org/schemas/xmls/qdc/2006/01/06/dcterms.xsd http://dspace.org/qualifieddc/ http://www.ukoln.ac.uk/metadata/dcmi/xmlschema/qualifieddc.xsd">
   <dc:title>Simplified modeling and optimization of silicon modulators based on free-carrier plasma dispersion effect</dc:title>
   <dc:creator>Pérez-Galacho, Diego</dc:creator>
   <dc:creator>Marris-Morini, Delphine</dc:creator>
   <dc:creator>Stoffer, R.</dc:creator>
   <dc:creator>Cassan, E.</dc:creator>
   <dc:creator>Baudot, C.</dc:creator>
   <dc:creator>Korthorst, T.</dc:creator>
   <dc:creator>Boeuf, F.</dc:creator>
   <dc:creator>Vivien, L.</dc:creator>
   <dc:subject>Comunicaciones ópticas</dc:subject>
   <dcterms:abstract>n this paper, a simplified model of silicon phase modulators is presented that enables favorable accuracy together with a substantial reduction in computational effort and without the requirement of semiconductor TCAD device simulation software. This permits fast optimization of the different parameters of a modulator. The model was successfully implemented in Phoenix Optodesigner optical software allowing the optimization of silicon phase shifters for different applications. Moreover, this model presents a great potential for the simulation of modulators based on PN interdigitated junctions, which normally require complex and time consuming 3D simulations. Simulation time was reduced by a factor of 6 for the lateral PN junction based modulator, and two orders of magnitude reduction was obtained for interdigitated PN junctions based modulators.</dcterms:abstract>
   <dcterms:dateAccepted>2024-09-28T15:07:31Z</dcterms:dateAccepted>
   <dcterms:available>2024-09-28T15:07:31Z</dcterms:available>
   <dcterms:created>2024-09-28T15:07:31Z</dcterms:created>
   <dcterms:issued>2016-11-04</dcterms:issued>
   <dc:type>journal article</dc:type>
   <dc:identifier>D. Pérez-Galacho, D. Marris-Morini, R. Stoffer, E. Cassan, C. Baudot, T. Korthorst, F. Boeuf, and L. Vivien, "Simplified modeling and optimization of silicon modulators based on free-carrier plasma dispersion effect," Opt. Express 24, 26332-26337 (2016)</dc:identifier>
   <dc:identifier>https://hdl.handle.net/10630/33840</dc:identifier>
   <dc:identifier>10.1364/OE.24.026332</dc:identifier>
   <dc:language>eng</dc:language>
   <dc:rights>open access</dc:rights>
   <dc:publisher>Optical Publishing Group</dc:publisher>
</qdc:qualifieddc>
</metadata></record></GetRecord></OAI-PMH>