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oai:riuma.uma.es:10630/338412026-02-03T10:56:17Zcom_10630_2254col_10630_37953

00925njm 22002777a 4500 dc Pérez-Galacho, Diego author Alonso-Ramos, Carlos author Mazeas, Florent author Le Roux, Xavier author Oser, Dorian author Zhang, Weiwei author Marris-Morini, Delphine author Labonté, Laurent author Tanzilli, Sébastien author Cassan, Éric author Vivien, Laurent author 2017-04-04 The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, 220 nm thick, Si Bragg filter featur- ing a corrugation width of 150 nm, a rejection bandwidth of 1.1 nm and an extinction ratio exceeding 40 dB. This represents a ten-fold width increase compared to conventional single-periodicity, single-etch counterparts with similar bandwidths Diego Pérez-Galacho, Carlos Alonso-Ramos, Florent Mazeas, Xavier Le Roux, Dorian Oser, Weiwei Zhang, Delphine Marris-Morini, Laurent Labonté, Sébastien Tanzilli, Éric Cassan, and Laurent Vivien, "Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures," Opt. Lett. 42, 1468-1471 (2017) https://hdl.handle.net/10630/33841 10.1364/OL.42.001468 Comunicaciones ópticas Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures