2026-05-28T13:19:15Zhttps://riuma.uma.es/rest/oai/requestoai:riuma.uma.es:10630/338422026-02-03T11:29:29Zcom_10630_2254col_10630_37953
RIUMA. Repositorio Institucional de la Universidad de Málaga
author
Pérez-Galacho, Diego
author
Baudot, Charles
author
Hirtzlin, Tifenn
author
Messaoudène, Sonia
author
Vulliet, Nathalie
author
Crozat, Paul
author
Boeuf, Frederic
author
Vivien, Laurent
author
Marris-Morini, Delphine
2024-09-28T15:15:09Z
2024-09-28T15:15:09Z
2017-05-04
Diego Perez-Galacho, Charles Baudot, Tifenn Hirtzlin, Sonia Messaoudène, Nathalie Vulliet, Paul Crozat, Frederic Boeuf, Laurent Vivien, and Delphine Marris-Morini, "Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band," Opt. Express 25, 11217-11222 (2017)
https://hdl.handle.net/10630/33842
10.1364/OE.25.011217
In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (Vπ Lπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 Vpp, compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gbps.
eng
Comunicaciones ópticas
Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band
journal article
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URL
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Low_voltage_25Gbps_silicon_Mach-Zehnder_modulator_in_the_O-band.pdf