Listar por autor "Barranco, Ángel"
Mostrando ítems 1-3 de 3
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Band Gap Narrowing versus Formation of Electronic States in the Gap in N-TiO2 Thin Films.
Romero-Gómez, Pablo
; Hamad, Said; González, Juan Carlos; Barranco, Ángel; Espinós, Juan Pedro; Cotrino, José; González Elipe, Agustin[et al.] (ACS, 2010-12-02)
N-containing TiO2 thin films with different amounts of nitrogen have been prepared by plasma enhanced chemical vapor deposition (PECVD) by using different titanium precursors without (titanium isopropoxide, TTIP) and ... -
Chemical State of Nitrogen and Visible Surface and Schottky Barrier Driven Photoactivities of N-Doped TiO2 Thin Films.
Romero-Gómez, Pablo; Rico, Victor; Borrás, Ana; Barranco, Ángel; Espinós, Juan Pedro; Cotrino, José; González Elipe, Agustin[et al.] (ACS, 2009-07-07)
N-doped TiO2 thin films have been prepared by plasma enhanced chemical vapor deposition and by physical vapor deposition by adding nitrogen or ammonia to the gas phase. Different sets of N-doped TiO2 thin films have been ... -
Tunable Nanostructure and Photoluminescence of Columnar ZnO Films Grown by Plasma Deposition.
Romero-Gómez, Pablo; Tourdet, Johann; Sánchez Valencia, Juan; Borrás, Ana; Barranco, Ángel; González Elipe, Agustin[et al.] (ACS, 2010-11-22)
Se crecieron películas delgadas de ZnO nanoporozo con una nanostructura y fotoluminiscencia (PL) ajustables mediante deposición en fase de vapor asistida por plasma en sustratos de Si oxidados en la superficie. Estas ...