Listar por autor "Moser, M."
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Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates
Moser, M.; Pradhan, M.; Alomari, M.; Schoch, B.; Sharma, K.; Kallfass, I.; García-Luque, A.; Martín-Guerrero, Teresa María
; Burghartz, J. N.[et al.] (2022)
A CMOS-compatible industrial processing and RF analysis of 150 mm GaN-on-HR-Si substrates with AlGaN and InAlN barrier is presented. Process development along with transfer to large-wafer scale is shown and some HEMT ...