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dc.contributor.authorRaffo, Antonio
dc.contributor.authorColantonio, Paolo
dc.contributor.authorCipriani, Elisa
dc.contributor.authorVadala, Valeria
dc.contributor.authorBosi, Gianni
dc.contributor.authorMartin-Guerrero, Teresa Maria 
dc.contributor.authorVannini, Giorgio
dc.contributor.authorGiannini, Franco
dc.date.accessioned2015-10-07T09:01:17Z
dc.date.available2015-10-07T09:01:17Z
dc.date.created2015
dc.date.issued2015-10-07
dc.identifier.urihttp://hdl.handle.net/10630/10474
dc.description.abstractThis contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-μm 10x100-μm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.es_ES
dc.description.sponsorshipUniversidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.es_ES
dc.language.isospaes_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.subjectTelecomunicaciones - Congresoses_ES
dc.subject.otherFETes_ES
dc.subject.otherHarmonic manipulationes_ES
dc.subject.otherIntegrated circuit measurementes_ES
dc.subject.otherMicrowave power amplifieres_ES
dc.subject.otherSemiconductor device measurementes_ES
dc.titleTheoretical consideration on harmonic manipulated amplifiers based on experimental dataes_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.centroE.T.S.I. de Telecomunicaciónes_ES
dc.relation.eventtitle2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC)es_ES
dc.relation.eventplaceTaormina (Sicilia, Italy)es_ES
dc.relation.eventdate1-2 October 2015es_ES
dc.cclicenseby-nc-ndes_ES


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