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dc.contributor.authorGabás, Mercedes 
dc.contributor.authorLópez-Escalante, María Cruz 
dc.contributor.authorRamos-Barrado, Jose Ramon 
dc.contributor.authorŚciana, Beata
dc.contributor.authorDawidowski, Wojciech
dc.contributor.authorRadziewicz, Damian
dc.contributor.authorDłużewski, Piotr
dc.date.accessioned2015-10-14T11:47:54Z
dc.date.available2015-10-14T11:47:54Z
dc.date.created2015
dc.date.issued2015-10-14
dc.identifier.urihttp://hdl.handle.net/10630/10513
dc.description.abstractGaAsN and InGaAsN semiconductor alloys with a small amount of nitrogen, so called dilute nitrides, constitute a novel compounds family with applications in telecom lasers and very efficient multijunction solar cells. The incorporation of N, which has a much larger electronegativity and smaller atomic size compared to As, induces a strong structural distortion in the InGaAs coordination chemistry, which will also affect the material electronic structure and band-gap. In particular, the nearest-neighbour bonding configuration of the N in InGaAsN has proven its influence on the band-gap. Our ARXPS results demonstrate that a higher growth temperature favour the formation of In-N bonds.es_ES
dc.description.sponsorshipUniversidad de Málaga. Campus de Excelencia Internacional Andalucía Tech. - MINECO through TEC2011-28639-C02-02 and TEC2014-54260-C3-3-P - Wroclaw University of Technology statutory grantes_ES
dc.language.isoenges_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.subjectSemiconductoreses_ES
dc.subject.otherDilute nitrideses_ES
dc.subject.otherIII-V semiconductorses_ES
dc.subject.otherAngle-resolved XPSes_ES
dc.titleN coordination chemistry in diluted InGaAs nitride layerses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.centroFacultad de Cienciases_ES
dc.relation.eventtitleECASIA2015es_ES
dc.relation.eventplaceGranada (Spain)es_ES
dc.relation.eventdateSeptiembre 2015es_ES
dc.identifier.orcidhttp://orcid.org/0000-0002-9626-6131es_ES
dc.cclicenseby-nc-ndes_ES


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