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dc.contributor.authorArrechea Marcos, Iratxe
dc.contributor.authorDe la Peña, A.
dc.contributor.authorSegura, J. L.
dc.contributor.authorRuíz-Delgado, María del Carmen 
dc.contributor.authorPonce Ortiz, R.
dc.contributor.authorLópez-Navarrete, Juan Teodomiro 
dc.date.accessioned2016-07-29T11:09:37Z
dc.date.available2016-07-29T11:09:37Z
dc.date.created2016
dc.date.issued2016-07-29
dc.identifier.urihttp://hdl.handle.net/10630/11923
dc.description.abstractAmbipolar organic field-effect transistors (OFETs), which can efficiently transport both holes and electrons, using a single type of electrode, are currently of great interest due to their possible applications in complementary metal oxide semiconductor (CMOS)-like circuits, sensors, and in light-emitting transistors. Several theoretical and experimental studies have argued that most organic semiconductors should be able to transport both types of carrier, although typically unipolar behavior is observed. One factor that can compromise ambipolar transport in organic semiconductors is poor solid state overlap between the HOMO (p-type) or LUMO (n-type) orbitals of neighboring molecules in the semiconductor thin film. In the search of low-bandgap ambipolar materials, where the absence of skeletal distortions allows closer intermolecular π-π stacking and enhanced intramolecular π-conjugation, a new family of oligothiophene-naphthalimide assemblies have been synthesized and characterized, in which both donor and acceptor moieties are directly conjugated through rigid linkers. In previous works we found that oligothiophene-napthalimide assemblies connected through amidine linkers (NDI derivates) exhibit skeletal distortions (50-60º) arising from steric hindrance between the carbonyl group of the arylene core and the sulphur atom of the neighbored thiophene ring (see Figure 1). In the present work we report novel oligo- and polythiophene–naphthalimide analogues NAI-3T, NAI-5T and poly-NAI-8C-3T, in which the connections of the amidine linkage have been inverted in order to prevent steric interactions. Thus, the nitrogen atoms are directly connected to the naphthalene moiety in NAI derivatives while they were attached directly to the thiophene moiety in the previously investigated NDI-3T and NDI-5T. In Figure 1 is depicted the calculated molecular structure of NAI-3T together with that of NDI-3T showing how the steric interactions are not present in the novel NAI derivative. The planar skeletons in these new family induce higher degree of crystallinity and the carrier charge transport can be switched from n-type to ambipolar behaviour. The highest FET performance is achieved for vapor-deposited films of NAI-3T with mobilities of 1.95x10-4cm2V-1s-1 and 2.00x10-4cm2V-1s-1 for electrons and holes, respectively. Finally, these planar semiconductors are compared with their NDI derivates analogues, which exhibit only n-type mobility, in order to understand the origin of the ambipolarity in this new series of molecular semiconductors.es_ES
dc.description.sponsorshipUniversidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.es_ES
dc.language.isoenges_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.subjectSemiconductores orgánicoses_ES
dc.subject.otherOrganic semiconductorses_ES
dc.subject.otherField-effect transistorses_ES
dc.subject.otherNaphthalenediimidees_ES
dc.titleMaterials design for ambipolar devices: tuning orbital energetics in oligothiophene-naphthalimides semiconductorses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.centroFacultad de Cienciases_ES
dc.relation.eventtitlePolyMat Spotlightes_ES
dc.relation.eventplaceSan Sebastiánes_ES
dc.relation.eventdate21/06/2016es_ES
dc.identifier.orcidhttp://orcid.org/0000-0002-3836-3494es_ES
dc.cclicenseby-nc-ndes_ES


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