The characterization of active devices is a key point when developing system-level design techniques. To this aim, an
automatic quasi-static (QS) nonlinear model extraction technique for solid state devices by using the Nonlinear Function Sampling
(NFS) operator has been already developed and validated for GaN FET transistors. In this contribution, the adaptation of
this technique to one-port devices is proposed and tested. An example has been designed, in which a commercial diode has
been characterized by using a CAD tool and its foundry model. It has been shown that the proposed equivalent nonlinear model
extracted with NFS-based method offers good results when simulating the diode behaviour even under conditions not exactly
the same as those employed in the characterization process.
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