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    • Tecnología Electrónica - (TE)
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    •   RIUMA Principal
    • Investigación
    • Tecnología Electrónica - (TE)
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    Analysis of the degradation of amorphous silicon-based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

    • Autor
      Piliougine, Michel; Sánchez-Friera, Paula; Petrone, Giovanni; Sanchez-Pacheco, Francisco JoseAutoridad Universidad de Málaga; Spagnuolo, Giovanni; [et al.]
    • Fecha
      2022
    • Editorial/Editor
      Wiley
    • Palabras clave
      Silicio
    • Resumen
      The degradation of two amorphous silicon-based photovoltaic (PV) modules, namely, of single junction amorphous silicon (a-Si) and of micromorph tandem (a-Si/μ-Si), after 11 years of exposure in the south of Spain is analyzed. Their I-V curves were measured outdoors to study the changes of the electrical parameters in the course of three different periods: during the initial days of exposure, during the first year, and in the subsequent 10-year period. The translation of the curves to an identical set of operating conditions, which enables a meaningful comparison, was done by the dif ferent correction procedures described in the standard IEC60891:2021, including the procedure 3, which does not require the knowledge of module parameters, whose values are typically not available. The annual power degradation rates over the entire 11-year period are 1.12% for the a-Si module, which is 3.02% for the first year, and 0.98% for the a-Si/μ-Si, which is 2.29% for the initial year
    • URI
      https://hdl.handle.net/10630/24064
    • DOI
      https://dx.doi.org/http://doi.org/10.1002/pip.3567
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    PIP3567.pdf (2.208Mb)
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    REPOSITORIO INSTITUCIONAL UNIVERSIDAD DE MÁLAGA
    REPOSITORIO INSTITUCIONAL UNIVERSIDAD DE MÁLAGA
     

     

    REPOSITORIO INSTITUCIONAL UNIVERSIDAD DE MÁLAGA
    REPOSITORIO INSTITUCIONAL UNIVERSIDAD DE MÁLAGA