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dc.contributor.authorPiliougine, Michel
dc.contributor.authorSánchez-Friera, Paula
dc.contributor.authorPetrone, Giovanni
dc.contributor.authorSanchez-Pacheco, Francisco Jose 
dc.contributor.authorSpagnuolo, Giovanni
dc.contributor.authorSidrach-de-Cardona-Ortin, Mariano 
dc.date.accessioned2022-05-06T12:37:13Z
dc.date.available2022-05-06T12:37:13Z
dc.date.created2022
dc.date.issued2022
dc.identifier.citationPiliougine, Michel & Sánchez-Friera, Paula & Petrone, Giovanni & Sánchez Pacheco, Francisco & Spagnuolo, Giovanni & Sidrach-de-Cardona, M.. (2022). Analysis of the degradation of amorphous silicon-based modules after 11 years of exposure by means of IEC60891:2021 procedure 3. Progress in Photovoltaics Research and Applications. 10.1002/pip.3567es_ES
dc.identifier.urihttps://hdl.handle.net/10630/24064
dc.description.abstractThe degradation of two amorphous silicon-based photovoltaic (PV) modules, namely, of single junction amorphous silicon (a-Si) and of micromorph tandem (a-Si/μ-Si), after 11 years of exposure in the south of Spain is analyzed. Their I-V curves were measured outdoors to study the changes of the electrical parameters in the course of three different periods: during the initial days of exposure, during the first year, and in the subsequent 10-year period. The translation of the curves to an identical set of operating conditions, which enables a meaningful comparison, was done by the dif ferent correction procedures described in the standard IEC60891:2021, including the procedure 3, which does not require the knowledge of module parameters, whose values are typically not available. The annual power degradation rates over the entire 11-year period are 1.12% for the a-Si module, which is 3.02% for the first year, and 0.98% for the a-Si/μ-Si, which is 2.29% for the initial yeares_ES
dc.description.sponsorshipThis work is supported by Ministero dell'Istruzione, dell'Università e della Ricerca (Italy) (grant PRIN2020-HOTSPHOT 2020LB9TBC and grant PRIN2017-HEROGRIDS 2017WA5ZT3_003); Università degli Studi di Salerno (FARB funds); Ministerio de Ciencia, Innovacion y Universidades (Spain) (grant RTI2018-095097-B-I0).es_ES
dc.language.isoenges_ES
dc.publisherWileyes_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.subjectSilicioes_ES
dc.subject.otherAamorphous silicones_ES
dc.subject.otherIEC60891es_ES
dc.subject.otherI-V curve correctiones_ES
dc.subject.otherMicrocrystalline silicones_ES
dc.subject.otherOutdoor measurementes_ES
dc.subject.otherPhotovoltaic degradationes_ES
dc.subject.otherThin filmes_ES
dc.titleAnalysis of the degradation of amorphous silicon-based modules after 11 years of exposure by means of IEC60891:2021 procedure 3es_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.centroEscuela de Ingenierías Industrialeses_ES
dc.identifier.doihttp://doi.org/10.1002/pip.3567
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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