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Polarization insensitive metamaterial engineered multimode interference coupler in a 220 nm silicon-on-insulator platform
dc.contributor.author | Pérez-Armenta, Carlos | |
dc.contributor.author | Ortega-Moñux, Alejandro | |
dc.contributor.author | Luque-González, José Manuel | |
dc.contributor.author | Halir, Robert | |
dc.contributor.author | Schmid, Jens | |
dc.contributor.author | Cheben, Pavel | |
dc.contributor.author | Molina-Fernández, Íñigo | |
dc.contributor.author | Wanguemert-Pérez, Juan Gonzalo | |
dc.date.accessioned | 2023-04-26T09:49:34Z | |
dc.date.available | 2023-04-26T09:49:34Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Carlos Pérez-Armenta, Alejandro Ortega-Moñux, José Manuel Luque-González, Robert Halir, Jens Schmid, Pavel Cheben, Iñigo Molina-Fernández, J. Gonzalo Wangüemert-Pérez, Polarization insensitive metamaterial engineered multimode interference coupler in a 220 nm silicon-on-insulator platform, Optics & Laser Technology, Volume 164, 2023, 109493, ISSN 0030-3992, https://doi.org/10.1016/j.optlastec.2023.109493. (https://www.sciencedirect.com/science/article/pii/S0030399223003869) | es_ES |
dc.identifier.uri | https://hdl.handle.net/10630/26414 | |
dc.description.abstract | High-index contrast silicon waveguides exhibit strong birefringence that hinders the development of polarization-insensitive devices, especially for sub-micrometer silicon layer thickness. Here a polarizationindependent 2 × 2 multimode interference coupler in a 220 nm silicon-on-insulator platform is designed and experimentally demonstrated for the first time. Leveraging the advanced control of electromagnetic properties provided by a subwavelength grating metamaterial topology, our multimode interference coupler operates for both TE and TM polarization states with measured polarization dependent loss, insertion loss and imbalance all less than 1 dB, and phase errors below 5◦ in the wavelength range from 1500 nm to 1560 nm. The device has a footprint of only 3.5 μm × 47.25 μm and was fabricated using a single etch-step process with a minimum feature size of 100 nm compatible with immersion deep-UV lithography. | es_ES |
dc.description.sponsorship | We acknowledge funding from Ministerio de Economía y Competitividad (PID2019106747RB-I00), Junta de Andalucía (P18-RT-1453, UMA-FEDERJA-158), Ministerio de Ciencia, Innovaci ́on y Universidades (FPU16/06762, FPU19/02408), and Universidad de Málaga. Funding for open access charge: Universidad de Málaga / CBUA. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Elsevier | es_ES |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Telecomunicaciones-Equipos y material | es_ES |
dc.subject | Sistemas de telecomunicaciones | es_ES |
dc.subject.other | Silicon photonics | es_ES |
dc.subject.other | Silicon-on-insulator | es_ES |
dc.subject.other | Subwavelength gratings | es_ES |
dc.subject.other | Multimode interference | es_ES |
dc.subject.other | Polarization insensitivity | es_ES |
dc.title | Polarization insensitive metamaterial engineered multimode interference coupler in a 220 nm silicon-on-insulator platform | es_ES |
dc.type | journal article | es_ES |
dc.centro | E.T.S.I. Telecomunicación | es_ES |
dc.identifier.doi | https://doi.org/10.1016/j.optlastec.2023.109493 | |
dc.type.hasVersion | VoR | es_ES |
dc.departamento | Ingeniería de Comunicaciones | |
dc.rights.accessRights | open access | es_ES |