AbstractÐA characterization methodology for nonquasi-static (NQS) phenomena in high frequency electron devices is carried out in this work. The proposed nonlinear diode model includes a S-parameters-based procedure for the estimation of the parasitic network, and the direct extraction of the nonlinear intrinsic state functions from single-tone measurements. This NQS proposal,
based on a first-order electric charge source, was validated for some commercial diodes improving the prior QS model when
frequency rises. A voltage-discretization analysis and some small signal (0.7-20 GHz) and waveforms (f0 = 2 and 8 GHz) tests,
prove the successful performance of these circuits and their frequency extrapolation possibilities versus foundry models.
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