A novel and fast method for the measurement-based identification of an analytical FET compact model from large- signal waveforms is presented. Based on a two-tone two-port experiment, a recently published Nonlinear Function Sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit model. The approach is demonstrated on a 250-nm GaN-on-SiC HEMT at 2.5 and 5 GHz.
