Extracción de modelos casi-estáticos para dispositivos no-lineales a partir de medidas en el dominio de la frecuencia

Abstract

In this contribution an extraction method already proposed by authors and suitable for FET-type devices that could be represented by a quasi-static model is illustrated. For the first time, the method is applied to a FET embedded in a parasitic shell and fed at each port with sources that include internal impedances. The main impact of adding these elements is that intrinsic voltages that control the nonlinear current and charge sources of the model to be extracted are not ideal monochromatic signals. The results show that the extraction method works with these more realistic control voltages at the expense of an important reduction of the range of control voltages with respect to the ideal case. The dependence of the results on the input power level is also assessed. Results demonstrate that the method is still valid under realistic conditions and it is ready to be applied to experimental results.